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   BAS16LD All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 12 October 2010 5 of 11 NXP Semiconductors BAS16LD Single high-speed switching diode (1) Tamb = 150 °C (2) Tamb =85°C (3) Tamb =25°C (4) Tamb = ?40 °C Based on square wave currents. Tj =25°C; prior to surge Fig 2. Forward current as a function of forward voltage; typical values Fig 3. Non-repetitive peak forward current as a function of pulse duration; maximum values (1) Tamb = 150 °C (2) Tamb =85°C (3) Tamb =25°C (4) Tamb = ?40 °C f=1MHz; Tamb =25°C Fig 4. Reverse current as a function of reverse voltage; typical values Fig 5. Diode capacitance as a function of reverse voltage; typical values 006aab132 1 10 102 103 IF (mA) 10?1 VF (V) 0 1.40.2 1.20.4 0.80.6 1.0 (1) (2) (3) (4) mbg704 10 1 102 IFSM (A) 10?1 tp ( μs) 11010 102 103 4 006aab133 102 IR (μA) 10 VR (V) 0 10020 40 60 80 1 10?1 10?2 10?3 10?4 10?5 (1) (2) (3) (4) 0 08164 12 VR (V) 0.8 0.6 0.4 0.2 mbg446 Cd (pF) |